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Author Samanta, Bodhisattwa, author.
Title Physics based analytical model for silicon carbide MESFET for microwave frequency applications / by Bodhisattwa Samanta.
Published [Northridge, California] : California State University, Northridge, 2013.
LOCATION CALL # STATUS
 Electronic Book  TA153 .Z953 2013 S26eb    ONLINE
  
Description 1 online resource (vi, 38 pages) : illustrations, some color.
Content Type text
still image
Format online resource
File Characteristics text file PDF
Thesis M.S. California State University, Northridge 2013.
Bibliography Includes bibliographical references (pages 35-38).
Note Description based on online resource; title from PDF title page (viewed on Aug. 7, 2013).
Summary In this paper, the author presents a physics based analytical modeling and simulation of ion implanted silicon carbide Schottky gate FET. The model has been developed to compute the drain-source current, intrinsic parameters such as, gate capacitances, drain-source resistance and transconductance taking into account of different fabrication parameters such as doping concentration of active channel, doping constant, mobility, the correlation between active channel depth and pinch off voltage and other physical parameters. The physics based analytical model for a non self-aligned SiC MESFET shows different intrinsic and extrinsic parameters reflecting the microwave frequency applications.
Subject Metal semiconductor field-effect transistors -- Design.
Silicon carbide -- Electric properties.
Diodes, Schottky-barrier.
Local Subject Dissertations, Academic -- CSUN -- Engineering -- Electrical and Computer Engineering.
Alternate Title Physics based analytical model for silicon carbide metal semiconductor field-effect transistors for microwave frequency applications
OCLC number 855543042