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Author Shah, Naynesh, author.
Title Simulation of optically controlled GaN (Gallium Nitride) using analytical modeling of high frequency response and switching applications / by Naynesh Shah.
Published [Northridge, California] : California State University, Northridge, 2012.
LOCATION CALL # STATUS
 Electronic Book  TA153 .Z953 2012 S43eb    ONLINE
  
Description 1 online resource (x, 64 pages) : illustrations, charts, graphs, color.
Content Type text
Format online resource
File Characteristics text file PDF
Thesis M.S. California State University, Northridge 2012.
Bibliography Includes bibliographical references (pages 42-48).
Summary In this project, an analytical modeling of optically controlled Gallium Nitride has been presented for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both of the gate-source capacitances, gate-drain capacitances and switching speed under dark and illumination conditions. Different fabrication parameters such as ion dose, ion energy and ion range parameters, channel length and active channel depth have been incorporated into the model to understand the better effect of device performance under the dark intensity and illumination conditions. The switching speed of the device has been studied by changing the active channel depth, gate length and other electrical and fabrications parameters influenced by the dark and illumination conditions.
Note Description based on online resource; title from PDF title page (viewed on June 14, 2012).
Subject Gallium nitride.
Local Subject Dissertations, Academic -- CSUN -- Engineering -- Electrical and Computer Engineering.
OCLC number 849912240