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Author Ram Kamal, Deepak Sharma, author.
Title Analytical modeling of scaling the ion-implanted gallium nitrate MESFET / by Deepak Sharma Ram Kamal.
Published [Northridge, California] : California State University, Northridge, 2012.
LOCATION CALL # STATUS
 Electronic Book  TA153 .Z953 2012 R36eb    ONLINE
  
Description 1 online resource (vii, 67 pages) : charts, graphs, photographs, illustrations, some color.
Content Type still image
text
Format online resource
File Characteristics text file PDF
Thesis M.S. California State University, Northridge 2012.
Bibliography Includes bibliographical references (pages 52-57).
Summary In this project, an analytical modeling of scaling the ion-implanted Gallium nitrate MESFET has been presented. The model has been developed to obtain high power aided efficiency and high frequency performance which can be optimized by scaling the device for miniaturization. Device parameters such as drain-source current and threshold voltage are plotted and discussed with respect to scaling factor to evaluate the device parameter for a comparative study of long channel and short channel gallium nitrate device. The scaling tool on the semiconductor device shows the device performance at their miniaturization stage, but all electrical parameters ultimately saturate up to certain range of device scaling.
Note Description based on online resource; title from PDF title page (viewed on February 07, 2013).
Subject Miniature electronic equipment.
Local Subject Dissertations, Academic -- CSUN -- Engineering -- Electrical and Computer Engineering.
OCLC number 849914773