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Author Paleru, Avinash Babu, author.
Title Study on determination of an analytical model for the barrier height enhancement of the GaN Schottky barrier diode using low-energy ion implantation / by Avinash Babu Paleru.
Published [Northridge, California] : California State University, Northridge, 2012.
LOCATION CALL # STATUS
 Electronic Book  TA153 .Z953 2012 P35eb    ONLINE
  
Description 1 online resource (viii, 62 pages) : graphs, charts, some color.
Content Type text
still image
Format online resource
File Characteristics text file PDF
Thesis M.S. California State University, Northridge 2012.
Bibliography Includes bibliographical references (pages 49-53).
Summary This project explains an analytic model for the barrier height enhancement of the Gallium Nitride Schottky barrier diode where the metal-np semiconductor (or metal-pn semiconductor) has been derived by considering the implanted profile of the Gaussian type in the surface-doped layer and the surface properties of the metal-semiconductor system. Theoretical results have been obtained for the Gallium Nitride Schottky barrier diodes with low-energy (25 keV) phosphorous implantation. Finally it will be shown that the barrier height enhancement of the Gallium Nitride Schottky barrier diodes as a function of ion dose is in good agreement with the theoretical model.
Note Description based on online resource; title from PDF title page (viewed on January 10, 2013).
Subject Diodes, Schottky-barrier.
Local Subject Dissertations, Academic -- CSUN -- Engineering -- Electrical and Computer Engineering.
OCLC number 850960033